DMP3020LSS-13

$0.82

Description：MOSFET P-CH 30V 12A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b8c69261d1ee Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 12A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：14mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30.7 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：1802 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMP3020LSS-13

Overview

The DMP3020LSS-13 is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source voltage rating and operates in an SO-8 surface-mount package. The device provides a maximum continuous drain current of -12A at +25°C, with a typical on-resistance of 14mΩ at VGS = -10V. Key electrical parameters include a gate threshold voltage of -1 to -2V, total gate charge of 15.3nC at VGS = -4.5V, and input capacitance of 1802pF. Thermal characteristics specify a power dissipation of 2.5W and a junction-to-ambient thermal resistance of 50°C/W.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
Qualified to AEC-Q101 standards for automotive-grade high reliability.
Totally lead-free and fully RoHS compliant, containing no purposely added lead.
Halogen and antimony free, classified as a 'Green' device.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging configuration. Confirm that the component meets AEC-Q101 qualification requirements if intended for automotive environments. Ensure the SO-8 package dimensions align with the suggested pad layout provided in the datasheet to prevent soldering defects during assembly.

Selection Notes

Select this component when a low on-resistance P-channel MOSFET is required for efficient power management circuits. The device is suitable for applications demanding fast switching speeds and low input leakage. Consider the thermal resistance and power dissipation limits relative to the expected ambient temperature and PCB copper pad area to ensure safe operation within the specified junction temperature range.

Part Context

This part belongs to the DMP3020LSS series of single P-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a standard SO-8 case constructed from molded plastic with a flammability rating of 94V-0. The product marking includes the manufacturer code, product type identifier, and date code for traceability.