DMP3021SFVWQ-13

$0.77

Description：MOSFET P-CH 30V 9.8A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:7847b0033398 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 9.8A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta), 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：15mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：1799 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMP3021SFVWQ-13

Overview

The DMP3021SFVWQ-13 is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -30V drain-source voltage and low on-resistance of 15mΩ at VGS=-10V and 25mΩ at VGS=-5V. The device supports continuous drain currents up to -42A at TC=+25°C and operates within a junction temperature range of -55°C to +150°C. Packaged in the thermally efficient PowerDI3333-8/SWP format, it meets AEC-Q101 standards.

Feature Summary

Low RDS(ON) minimizes on-state power losses
Small form factor package enables higher density designs
Occupies significantly less board area than SO-8 packages
ESD protected gate structure

Applications

Automotive backlighting circuits
Power-management functions
DC-DC converters

Procurement Notes

Verify that the specific ordering suffix matches the required tape and reel quantity. Confirm compliance with RoHS and halogen-free requirements if mandated by your design specifications. Ensure the component is sourced from authorized channels to guarantee authenticity and adherence to IATF 16949 manufacturing standards.

Selection Notes

Select this component when space constraints are critical compared to traditional SO-8 packages. Evaluate thermal performance based on the specific PCB copper area and mounting conditions. Verify that the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It is manufactured in IATF 16949 certified facilities and supports PPAP documentation. The product line targets high-reliability markets requiring stringent quality control and change management protocols.

Replacement Considerations

Check pinout compatibility and package dimensions against existing designs. Verify that alternative components meet the same AEC-Q101 qualification level and thermal resistance characteristics.