DMP3021SSS-13

DMP3021SSS-13

$1.01
  • Description:MOSFET BVDSS: 25V~30V SO-8 T&R 2
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:df8c815d99ca Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET BVDSS: 25V~30V SO-8 T&R 2
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:10.4A (Ta), 39A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):5V, 10V
  • Rds On (Max) @ Id, Vgs:15mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
  • Vgs (Max):±25V
  • Input Capacitance (Ciss) (Max) @ Vds:1799 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):1W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-SO
  • Package / Case:8-SOIC (0.154", 3.90mm Width)

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DMP3021SSS-13

Overview

The DMP3021SSS-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and a maximum continuous drain current of -39A at TC = +25°C. The device offers a low on-state resistance of 15mΩ at VGS = -10V and 25mΩ at VGS = -5V. Packaged in an SO-8 case, it operates within a temperature range of -55°C to +150°C.

Feature Summary

  • Low RDS(ON) minimizes on-state losses for high efficiency
  • Small form factor thermally efficient package enables higher density end products
  • Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
  • ESD protected gate

Applications

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 2,500 units per reel. Confirm that the component meets RoHS compliance standards and is halogen- and antimony-free as specified in the manufacturer's documentation before finalizing procurement specifications.

Selection Notes

Select this component when designing circuits requiring a compact P-channel MOSFET with low on-resistance and superior switching performance. Ensure the application environment supports the specified thermal characteristics and that the gate drive voltage aligns with the threshold requirements for optimal conduction.

Part Context

This part belongs to the DMP3021SSS series of advanced P-channel enhancement mode MOSFETs from Diodes Incorporated. Designed to minimize on-state resistance while maintaining fast switching speeds, these devices are intended for high-efficiency power management applications where space constraints and thermal efficiency are critical design factors.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided datasheet.

DMP3021SSS-13DMP3021SSS-13
$1.01
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