DMP3026SFDE-13

$0.64

Description：MOSFET P-CH 30V 10.4A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:98ac23412bf7 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 10.4A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：10.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：19mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：19.6 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：1204 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type E)
Package / Case：6-PowerUDFN

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DMP3026SFDE-13

Overview

The DMP3026SFDE-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 (Type E) surface-mount package with a 0.6mm profile. The device supports a drain-source voltage of -30V and offers a maximum on-resistance of 19mΩ at VGS=-10V and ID=-4.5A, or 45mΩ at VGS=-4.5V and ID=-3.5A. Continuous drain current ratings are -8.7A at TA=+25°C and -10.4A for short pulses. Total gate charge is 19.6nC at VGS=-10V. Thermal resistance junction-to-ambient is 175°C/W steady state.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
Features an ultra-low 0.6mm profile suitable for space-constrained low-profile applications.
Includes integrated ESD protection on the gate terminal.
Constructed with lead-free, fully RoHS compliant materials that are halogen and antimony free.

Applications

Battery Management Systems
General Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets the required JEDEC standards for high reliability if applicable to the design. Ensure the U-DFN2020-6 footprint matches the PCB layout guidelines provided in the datasheet to maintain thermal and mechanical integrity.

Selection Notes

Select this component when a compact P-channel MOSFET with low on-resistance is required for efficient power switching. The low gate threshold voltage allows for compatibility with various logic levels. Consider the thermal resistance values and power dissipation limits relative to the operating ambient temperature and board copper area to ensure safe operation within the specified junction temperature range.

Part Context

This part belongs to the DMP3026 series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the U-DFN2020-6 (Type E) case outline, which provides a small footprint with a 0.6mm height. The device is designed for general-purpose switching applications requiring high efficiency and low profile constraints.

Replacement Considerations

For automotive applications requiring specific change control, refer to the related automotive grade parts with the Q-suffix. Verify pinout compatibility and electrical parameters such as RDS(ON) and VGS(th) when substituting with other P-channel MOSFETs in the same voltage class.