DMP3026SFDF-13

$0.64

Description：MOSFET P-CH 30V 10.3A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c5dd7d052d53 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 10.3A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：10.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：19mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：19.6 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：1204 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

Download product information

DMP3026SFDF-13

Overview

The DMP3026SFDF-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and a maximum continuous drain current of -8.6A at +25°C, rising to -10.3A for short pulses. The device exhibits a low on-resistance of 19mΩ at VGS=-10V and 45mΩ at VGS=-4.5V. Packaged in a U-DFN2020-6 (Type F) case with a 0.6mm profile, it supports a junction temperature range from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Features an ultra-low 0.6mm profile, making the component ideal for space-constrained, low-profile electronic designs.
Incorporates an ESD protected gate structure to enhance reliability against electrostatic discharge events.

Applications

Battery Management Systems
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the required package type matches the U-DFN2020-6 (Type F) mechanical dimensions provided in the datasheet. Ensure compliance with RoHS and halogen-free requirements if specified for the target assembly process.

Selection Notes

Select this component when a compact P-channel MOSFET with low on-resistance is required for efficient power switching. The device is suitable for applications demanding a thin profile and robust thermal performance within a standard surface-mount footprint. Consider the gate threshold voltage and total gate charge characteristics to ensure compatibility with the intended drive circuitry and switching frequency requirements.

Part Context

This part belongs to the DMP3026SFDF series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series utilizes silicon technology and is housed in the U-DFN2020-6 package. The product is designed to meet JEDEC standards for high reliability and is fully compliant with EU RoHS directives.

Replacement Considerations

For automotive applications requiring specific change control or AEC-Q qualification, consult the related automotive grade parts with the Q-suffix. Verify pinout compatibility and electrical parameters before substituting with other P-channel MOSFETs in the same voltage and current class.