DMP3028LPSW-13

$0.18

Description：MOSFET BVDSS: 25V~30V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:5c67f4eda3ba Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：28mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1421 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.28W (Ta), 2.1W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMP3028LPSW-13

Overview

The DMP3028LPSW-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (BVDSS) of -30V and a gate-source voltage (VGSS) rating of ±20V. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 28mΩ at VGS = -10V and 38mΩ at VGS = -4.5V. Continuous drain current (ID) reaches -21A at TC = +25°C. Key electrical parameters include a gate threshold voltage (VGS(TH)) ranging from -1.0V to -2.4V and a total gate charge (Qg) of 22nC at VGS = -10V. Thermal resistance from junction to ambient is 100°C/W.

Feature Summary

Designed to minimize on-state losses while maintaining superior switching performance through low RDS(ON).
Small form factor thermally efficient package enables higher density end products.
100% unclamped inductive switching ensures more reliability under inductive load conditions.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration as documented in the official datasheet. Confirm that the component meets RoHS 2 and RoHS 3 compliance requirements if environmental regulations apply to your manufacturing process. Ensure the selected variant matches the required automotive qualification standards, such as AEC-Q101, by contacting the manufacturer directly, as standard production versions may not inherently possess these certifications without explicit confirmation.

Selection Notes

Select this component for applications requiring a compact P-channel solution with low on-resistance at standard logic levels. Evaluate the thermal performance based on the specified junction-to-ambient resistance when operating in free-air conditions. Consider the gate threshold voltage range to ensure compatibility with your control circuitry drive levels. Verify that the continuous and pulsed current ratings align with the peak loads expected in your specific power management or load switch design.

Part Context

This part belongs to Diodes Incorporated's advanced generation of P-channel MOSFETs designed for power management efficiency. It utilizes the PowerDI5060-8 case style, which provides a balance between thermal dissipation capabilities and board space savings. The device is intended for use in modern electronic systems where size constraints and energy efficiency are critical design factors.

Replacement Considerations

Consult the manufacturer's documentation for direct equivalent part numbers. Cross-referencing should verify matching BVDSS, RDS(ON), and package dimensions to ensure mechanical and electrical compatibility within the existing circuit layout.