DMP3028LSD-13

DMP3028LSD-13

$0.53
  • Description:MOSFET 2P-CH 30V 6A 8SO
  • Series:-

SKU:63a071b9ecd9 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 30V 6A 8SO
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:6A
  • Rds On (Max) @ Id, Vgs:25mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:10.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1241pF @ 15V
  • Power - Max:1.3W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

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DMP3028LSD-13

Overview

The DMP3028LSD-13 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of -30 V and a continuous drain current (I_D) of -6.0 A at +25°C. The device offers a typical static drain-source on-resistance (R_DS(ON)) of 20 mΩ at V_GS = -10 V, with a maximum of 25 mΩ under the same conditions. At V_GS = -4.5 V, R_DS(ON) is typically 29 mΩ. Total gate charge (Q_g) is 22 nC at V_GS = -10 V. The component operates within a junction temperature range of -55°C to +150°C and is housed in an SO-8 package.

Feature Summary

  • Dual P-channel configuration integrating two independent transistors into a single compact package for space-constrained designs.
  • Optimized low on-state resistance to minimize conduction losses while maintaining superior switching performance.
  • Totally lead-free construction that is fully RoHS compliant and halogen/antimony free.
  • Qualified to JEDEC standards for high reliability applications.

Applications

  • DC-DC Converters
  • Power Management Functions
  • Load Switch

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging format containing 2,500 units per reel. Confirm that the SO-8 case material utilizes molded plastic with a UL flammability classification rating of 94V-0. Ensure compatibility with J-STD-020 moisture sensitivity level 1 requirements during storage and handling procedures.

Selection Notes

Select this component when a dual P-channel topology is required within a standard SO-8 footprint. Evaluate thermal dissipation capabilities based on the specified junction-to-ambient thermal resistance values. Verify that the gate drive voltage levels align with the specified thresholds for optimal on-resistance performance across the intended operating temperature range.

Part Context

This part belongs to the DMP3028LSD series of advanced dual P-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to provide high efficiency in power management circuits by balancing low on-state resistance with fast switching speeds. The product line targets applications requiring compact solutions for managing multiple power paths or logical functions.

Replacement Considerations

Consult official manufacturer documentation for qualified automotive grade alternatives featuring the Q-suffix designation. Cross-reference specifications such as package dimensions, pinout configurations, and electrical ratings before substituting with components from other manufacturers.

FAQ

What is the maximum continuous drain current for the DMP3028LSD-13?

The maximum continuous drain current is -6.0 A at an ambient temperature of +25°C and -4.7 A at +70°C.

Does the DMP3028LSD-13 support automotive applications?

This specific part is not explicitly designated for automotive use; parts qualified to AEC-Q100/101/200 require referring to the related automotive grade parts with the Q-suffix.

What is the total gate charge value at V_GS = -10 V?

The total gate charge (Q_g) is typically 22 nC when tested at V_GS = -10 V.

DMP3028LSD-13DMP3028LSD-13
$0.53
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