DMP3028LSDQ-13

$0.21

Description：IC
Series：-

SKU:afe8866d7f18 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：6A (Ta)
Rds On (Max) @ Id, Vgs：28mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1241pF @ 15V
Power - Max：1.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：Automotive
Qualification：AEC-Q101

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DMP3028LSDQ-13

Overview

The DMP3028LSDQ is a dual P-channel enhancement mode MOSFET in an SO-8 package. It features a -30V drain-source voltage and low on-resistance of 28mΩ at VGS=-10V and 45mΩ at VGS=-4.5V. Continuous drain current reaches -6.0A at +25°C and -4.7A at +70°C. The device supports a maximum body diode forward current of -2.5A and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Dual P-channel configuration for high-efficiency power management
Optimized for low on-state resistance and fast switching performance
Qualified for automotive applications with AEC-Q101 certification
Manufactured in IATF 16949 certified facilities with PPAP capability

Applications

DC-DC converters
Power-management functions
Load switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel packing quantity of 2,500 units. Confirm that the SO-8 package dimensions align with the target PCB footprint. Ensure the design accounts for the thermal resistance values provided for steady-state and transient conditions to maintain safe operating temperatures.

Selection Notes

Select this component when a compact dual P-channel solution is required for space-constrained designs. The low input capacitance and fast switching speed make it suitable for high-frequency applications. Verify that the gate drive voltage levels match the specified thresholds for optimal RDS(ON) performance.

Part Context

This part belongs to Diodes Incorporated's generation of MOSFETs designed to minimize on-state resistance while maintaining superior switching characteristics. It is manufactured in facilities certified under IATF 16949 standards, ensuring quality control for automotive and industrial sectors.