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Product Detailed Parameters
- Description：MOSFET P-CH 30V 700MA SC59-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：700mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：250mOhm @ 400mA, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：160 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-65°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SC-59-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP3030SN-7 is a P-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It operates with a drain-source voltage of -30 V and a continuous drain current of -0.7 A. The device features a maximum static drain-source on-resistance of 0.45 Ω at a gate-source voltage of -4.5 V. It includes an ESD protected gate structure and is housed in an SC59 package. The component supports an operating temperature range from -65 °C to +150 °C.
Feature Summary
- Low on-resistance for efficient power switching
- Low gate threshold voltage for easy drive compatibility
- ESD protected gate structure for enhanced reliability
Applications
- Power management circuits
- Load switch applications
- Battery protection systems
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration containing 3000 units per carrier. Confirm that the required RoHS compliance and halogen-free status align with project specifications. Ensure the SC59 package dimensions match the intended PCB footprint layout before finalizing procurement orders.
Selection Notes
Select this component when a compact P-channel MOSFET with low on-resistance is required for space-constrained designs. Consider the thermal resistance of 250 °C/W and the 500 mW power dissipation limit for adequate heat sinking. Evaluate the gate threshold voltage characteristics against the available control logic levels to ensure reliable switching performance under all operating conditions.
Part Context
This part belongs to the DMP3030SN series of P-channel enhancement mode field effect transistors produced by Diodes Incorporated. The series utilizes silicon technology and is designed for general-purpose switching applications. The product is qualified to JEDEC standards for high reliability and is fully compliant with EU RoHS directives.
Replacement Considerations
For automotive applications requiring specific change control, refer to the related automotive grade parts with the Q-suffix. Verify pinout compatibility and electrical parameters when substituting with other P-channel MOSFETs in the SC59 package.
