DMP3036SFV-13

$0.54

Description：MOSFET P-CH 30V 30A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b1286f7af06a Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 30A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16.5 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：1931 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8 (Type UX)
Package / Case：8-PowerVDFN

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DMP3036SFV-13

Overview

The DMP3036SFV-13 is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage (BVDSS) and a maximum continuous drain current of -30A at TC = +25°C. The device exhibits a low on-state resistance (RDS(ON)) of 20mΩ at VGS = -10V and 29mΩ at VGS = -5V. Total gate charge (Qg) is 16.5nC at VGS = -10V. It operates within a junction temperature range of -55°C to +150°C and utilizes the PowerDI3333-8 surface-mount package.

Feature Summary

Low RDS(ON) minimizes on-state power losses for high efficiency.
Small form factor thermally efficient package enables higher density end products.
Occupies just 33% of the board area occupied by SO-8, enabling smaller end products.

Applications

Load Switch
Power Management Functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel packaging quantity of 3000 units per the manufacturer's documentation. Confirm that the component meets all applicable RoHS and halogen-free compliance requirements as defined in the official datasheet notes before finalizing procurement specifications.

Selection Notes

Select this component when a compact P-channel MOSFET with low on-resistance is required for space-constrained designs. Ensure the application voltage does not exceed the -30V BVDSS rating and verify that the thermal management strategy accommodates the specified thermal resistance values for both ambient and case conditions.

Part Context

This part belongs to the DMP3036 series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The device is housed in the PowerDI3333-8 (Type UX) package, which is a molded plastic 'Green' compound casing compliant with UL flammability classification 94V-0.

Replacement Considerations

DMP3036SFV-7 is an equivalent part number within the same series, differing only in the standard tape and reel packaging quantity of 2000 units compared to the 3000 units of the -13 variant. Both share identical electrical characteristics and mechanical dimensions.