DMP3045LFVW-7

$0.16

Description：MOSFET BVDSS: 25V~30V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:3850372f96b1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：5.7A (Ta), 19.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：42mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：782 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMP3045LFVW-7

Overview

The DMP3045LFVW-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum continuous drain current of -19.9A at a case temperature of +25°C, with a static drain-source on-resistance of 42mΩ at VGS = -10V. Packaged in a PowerDI3333-8 surface-mount format, it includes an integrated ESD protected gate.

Feature Summary

Minimizes on-state resistance while maintaining superior switching performance for high-efficiency power management.
Small form factor thermally efficient package enables higher density end products.
Occupies just 33% of the board area occupied by SO-8 packages.
Features an ESD protected gate.

Applications

General purpose interfacing switches
Power management functions

Procurement Notes

Verify the exact ordering suffix against the manufacturer's official documentation to ensure correct packing quantity and carrier type. Confirm that the component meets specific environmental compliance requirements such as RoHS or halogen-free standards if mandated by your design specifications. Cross-reference the datasheet revision number to guarantee alignment with the latest electrical characteristics and mechanical dimensions provided by Diodes Incorporated.

Selection Notes

Evaluate the thermal resistance parameters relative to your system's heat dissipation capabilities, particularly noting the difference between junction-to-ambient and junction-to-case ratings. Ensure the gate drive voltage aligns with the specified thresholds to achieve the desired on-resistance levels. Consider the package's physical footprint constraints compared to traditional SO-8 alternatives when designing the PCB layout.

Part Context

This component belongs to the DMP3045 series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a PowerDI3333-8 (SWP) package. The product line emphasizes low on-state resistance and compact size for modern electronic designs requiring efficient power switching solutions.

Replacement Considerations

For automotive applications requiring specific change control, consult the separate datasheet for the DMP3045LFVWQ variant. Verify pinout compatibility and electrical parameter overlaps before substituting with other P-channel MOSFETs in similar packages.