DMP3045LFVWQ-7

$0.66

Description：MOSFET BVDSS: 25V~30V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5ad35529ea3e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：5.7A (Ta), 19.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：42mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：782 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMP3045LFVWQ-7

Overview

The DMP3045LFVWQ is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -30V drain-source voltage rating and operates within a junction temperature range of -55°C to +150°C. The device offers a maximum on-resistance of 42mΩ at VGS = -10V and 65mΩ at VGS = -4.5V, supporting continuous drain currents up to -19.9A at TC = +25°C. Packaged in a PowerDI3333-8 (SWP) format, it provides high thermal efficiency and occupies significantly less board area compared to traditional SO-8 packages.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive use
PowerDI3333-8 package reduces board area by approximately 33% relative to SO-8
Integrated ESD protection on the gate terminal
Manufactured in IATF 16949 certified facilities

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify that the specific ordering suffix matches the required packing quantity, as the -7 suffix indicates a 2,000-unit tape and reel while the -13 suffix indicates 3,000 units. Confirm compliance with RoHS 2, RoHS 3, and halogen-free requirements during procurement. Ensure the component is sourced from authorized channels to maintain quality assurance and traceability standards mandated by automotive industry regulations.

Selection Notes

Select this component when designing compact power solutions requiring low on-state losses and robust thermal performance. The small form factor enables higher density end products without compromising electrical characteristics. Verify that the application's gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance. Consider the thermal resistance values when calculating heat dissipation for steady-state and pulsed operation scenarios.

Part Context

This part belongs to Diodes Incorporated's advanced information portfolio of automotive-grade MOSFETs. It utilizes silicon technology and is housed in a molded plastic package with matte tin annealed terminals over a copper leadframe. The device is classified under Level 1 moisture sensitivity per J-STD-020 and carries a UL flammability classification rating of 94V-0.