DMP3045LVTQ-13

$0.09

Description：MOSFET BVDSS: 25V~30V TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:db0a6e7af8f3 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：42mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：749 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.6W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

Download product information

DMP3045LVTQ-13

Overview

The DMP3045LVTQ-13 is a P-channel enhancement mode MOSFET in a TSOT26 package. It features a -30V drain-source voltage and a maximum continuous drain current of -5.4A at +25°C. The device exhibits a low on-resistance of 42mΩ at VGS=-10V and 65mΩ at VGS=-4.5V. It operates within a temperature range of -55°C to +150°C, with a total power dissipation of 1.6W.

Feature Summary

Qualified for automotive applications under AEC-Q101 standards
Features an ESD protected gate structure
Utilizes totally lead-free and fully RoHS compliant materials

Applications

Backlighting circuits
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel quantity of 10,000 units. Confirm that the component meets all applicable automotive quality requirements, including PPAP capability and IATF 16949 manufacturing certification, before finalizing procurement specifications.

Selection Notes

Select this component when designing circuits requiring a single P-channel switch with low on-resistance and high switching speed. Ensure the application voltage does not exceed the -30V rating and verify that the thermal management strategy accommodates the specified junction-to-ambient resistance values for steady-state operation.

Part Context

This part belongs to the DMP3045LVTQ series of P-channel MOSFETs manufactured by Diodes Incorporated. It is specifically engineered to meet stringent automotive industry requirements, offering a compact TSOT26 surface-mount package suitable for space-constrained electronic designs.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Do not assume cross-compatibility with other generic P-channel MOSFETs without verifying pinout, electrical ratings, and package dimensions.