DMP3048LSD-13

$0.18

Description：MOSFET 2P-CH 30V 4.8A 8SOIC
Series：-

SKU:0a85ef4c7fef Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 30V 4.8A 8SOIC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：4.8A (Ta)
Rds On (Max) @ Id, Vgs：48mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1438pF @ 15V
Power - Max：1.7W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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DMP3048LSD-13

Overview

The DMP3048LSD-13 is a dual P-channel enhancement mode MOSFET in an SO-8 package. It features a drain-source voltage of -30V and a maximum on-resistance of 48mΩ at VGS = -10V, supporting a continuous drain current of -4.8A. The device operates within a temperature range of -55°C to +150°C and includes low input capacitance for fast switching.

Feature Summary

Dual independent P-channel MOSFETs integrated into a single compact package
Optimized for high efficiency power management with minimized on-state resistance
Qualified to AEC-Q101 standards for automotive reliability applications

Applications

DC-DC Converters
Power Management Functions
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2500 units per reel. Confirm that the component meets RoHS compliance and halogen-free requirements as specified in the manufacturer's documentation before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring dual isolated P-channel switching within a limited footprint. Ensure gate drive voltages align with the specified thresholds for optimal RDS(ON) performance. Evaluate thermal dissipation capabilities against the junction-to-ambient resistance values provided in the datasheet for the intended operating environment.

Part Context

This part belongs to Diodes Incorporated's generation of P-channel MOSFETs designed to balance low on-resistance with superior switching performance. The dual configuration allows for efficient implementation of half-bridge or synchronous rectification topologies while maintaining a small physical profile suitable for dense PCB layouts.