DMP3050LSS-13

$0.55

Description：MOSFET P-CH 30V 4.8A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:64d1df5785a0 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 4.8A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：45mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.5 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：620 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.7W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

Download product information

DMP3050LSS-13

Overview

The DMP3050LSS-13 is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SO-8 surface-mount package and operates with a drain-source voltage of -30V. The device supports a continuous drain current of -4.8A at 25°C, with a maximum on-resistance of 45mΩ at VGS=-10V. Total gate charge is 10.5nC at VGS=-10V. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Designed for low on-state resistance while maintaining superior switching performance
Qualified to AEC-Q101 standards for high reliability applications
Totally lead-free and fully RoHS compliant construction

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify the component matches the specific datasheet revision DS35647 Rev. 4-2. Confirm the marking code corresponds to the correct year and week codes. Ensure the SO-8 package dimensions align with your PCB footprint requirements before finalizing procurement.

Selection Notes

Select this component when a P-channel MOSFET with a -30V rating is required. Consider the 45mΩ maximum on-resistance for efficiency calculations. Verify that the -4.8A continuous current capability meets the load requirements. Check thermal resistance values for heat dissipation planning in the target application.

Part Context

This part belongs to the DMP3050 series of P-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in an SO-8 case. The product line focuses on minimizing on-state resistance for high-efficiency power management solutions.

Replacement Considerations

Check for exact pinout compatibility if substituting. Verify that replacement parts meet or exceed the -30V breakdown voltage and -4.8A current ratings. Ensure the replacement package matches the SO-8 form factor.