DMP3050LVTQ-7

$0.43

Description：MOSFET BVDSS: 25V~30V TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Bulk

SKU:73b171c5ada7 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：50mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.5 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：620 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.6W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

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DMP3050LVTQ-7

Overview

The DMP3050LVTQ-7 is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -30V drain-source voltage and a maximum continuous drain current of -4.5A at +25°C. The device offers a low on-resistance of 50mΩ at VGS = -10V and 75mΩ at VGS = -4.5V. It operates within a temperature range of -55°C to +150°C, with a total power dissipation of 1.6W at +25°C. The component utilizes a TSOT26 package.

Feature Summary

Qualified to AEC-Q101 standards and supported by PPAP for automotive use
Manufactured in IATF16949 certified facilities
Totally lead-free and fully RoHS compliant
Halogen and antimony free green device

Applications

Backlighting
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging quantity of 3000 units. Confirm that the 'Q' designation indicates AEC-Q101 qualification and PPAP capability as documented in the official datasheet. Ensure the procurement channel provides traceability to Diodes Incorporated manufacturing records.

Selection Notes

Select this component when an automotive-grade P-channel MOSFET is required for space-constrained designs. The TSOT26 package provides a compact footprint suitable for high-density PCB layouts. Consider the thermal resistance characteristics and power dissipation limits relative to the expected ambient operating temperatures and duty cycles of the target application.

Part Context

This part belongs to the DMP3050 series of P-channel MOSFETs from Diodes Incorporated. It is specifically engineered to meet stringent automotive reliability requirements. The device integrates advanced silicon technology to achieve low on-resistance and fast switching speeds within a small surface-mount package.

Replacement Considerations

Direct substitutes include other AEC-Q101 qualified P-channel MOSFETs in the TSOT26 package with comparable -30V ratings and similar on-resistance specifications. Verify pinout compatibility and thermal performance before implementation.