SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DMP3056LDM-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and a maximum continuous drain current of -4.3A at +25°C. The device exhibits a low on-resistance of 45mΩ at VGS = -10V and 65mΩ at VGS = -4.5V. Packaged in an SOT26 surface-mount housing, it supports a total power dissipation of 1.25W to 1.5W depending on the PCB layout. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix matches the required packaging quantity. Confirm that the component meets all applicable environmental directives relevant to your region. Ensure the selected package variant aligns with your board design constraints. Review the manufacturer's standard terms and conditions regarding warranty and liability before finalizing procurement decisions.
Evaluate the thermal resistance characteristics against your expected ambient temperature and duty cycle. Consider the gate charge requirements relative to your driving circuit capabilities. Assess the safe operating area curves to ensure reliable operation under pulsed load conditions. Verify compatibility with your system's voltage levels and switching frequency requirements.
This component belongs to the DMP3056 series of P-channel MOSFETs designed for high-efficiency power management applications. The series focuses on minimizing on-state resistance without compromising switching speed. It is intended for use in general-purpose interfacing and analog switching roles within electronic systems.
For automotive applications requiring specific change control or AEC-Q qualification, refer to the related automotive grade parts with Q-suffixes listed on the manufacturer's website.