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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V SOT26 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：4.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：45mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：948 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.25W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-26
- Package / Case：SOT-23-6
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Overview
The DMP3056LDMQ-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of -30V and a maximum continuous drain current (ID) of -4.3A at +25°C. The device exhibits a low on-resistance (RDS(ON)) of 45mΩ at VGS = -10V and 65mΩ at VGS = -4.5V. Packaged in an SOT26 surface-mount format, it operates within a temperature range of -55°C to +150°C.
Feature Summary
- Low gate threshold voltage for efficient drive requirements
- Minimized on-state resistance combined with superior switching performance
- Totally lead-free and fully RoHS compliant construction
- Halogen and antimony free "Green" device
Applications
- General purpose interfacing switches
- Power management functions
- Analog switches
Procurement Notes
Verify the specific Q-suffix designation against official automotive qualification standards such as AEC-Q100/101/104/200. Confirm that the component is sourced from IATF 16949 certified facilities if PPAP capability is required for your manufacturing process. Ensure compatibility with high-reliability JEDEC standards during procurement planning.
Selection Notes
Select this component when designing circuits requiring a compact P-channel switch with low conduction losses. The SOT26 package suits space-constrained layouts. Evaluate thermal dissipation capabilities based on the specified junction-to-ambient resistance values under steady-state conditions. Consider the low input capacitance for high-speed switching applications.
Part Context
This part belongs to the DMP3056LDM series of P-channel MOSFETs designed for high-efficiency power management. It represents a new generation of devices optimized to minimize on-state resistance while maintaining fast switching speeds. The series targets general-purpose interfacing and analog switching roles in modern electronic systems.
Replacement Considerations
For automotive applications requiring specific change control or AEC-Q qualification, refer to the related automotive grade parts with the Q-suffix listed on the manufacturer's website. Verify pinout and electrical parameters match before substituting other P-channel MOSFETs in existing designs.
