DMP3056LSD-13

$0.90

Description：MOSFET 2P-CH 30V 6.9A 8SO
Series：-

SKU:0295b94f2864 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 30V 6.9A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：6.9A
Rds On (Max) @ Id, Vgs：45mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：722pF @ 25V
Power - Max：2.5W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

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DMP3056LSD-13

Overview

The DMP3056LSD-13 is a dual P-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a maximum drain-source voltage of -30V and a steady-state drain current of -6.9A at +25°C. The device offers a maximum on-resistance of 45mΩ at VGS = -10V and 65mΩ at VGS = -4.5V. Total power dissipation is rated at 2.5W, with an operating temperature range from -55°C to +150°C. It is housed in an SO-8 package.

Feature Summary

Dual P-channel MOSFET configuration
Low on-resistance for high efficiency
Fast switching speed
Qualified to AEC-Q101 standards

Applications

Power management functions
Backlighting circuits
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging format containing 2,500 units per reel as documented in the official datasheet. Confirm that the component meets RoHS compliance and halogen-free requirements if these specifications are mandatory for the intended assembly process. Ensure the SO-8 package dimensions align with the target PCB footprint design.

Selection Notes

Select this component when a compact dual P-channel solution is required for low-voltage applications. The device provides superior switching performance combined with minimized on-state resistance. Consider the thermal characteristics and power dissipation limits relative to the ambient operating conditions. Verify gate threshold voltage compatibility with the driving logic levels used in the circuit design.

Part Context

This part belongs to the DMP3056 series of new generation MOSFETs designed by Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining fast switching capabilities. The DMP3056LSD variant specifically integrates two independent P-channel transistors within a single surface-mount package to save board space.