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Product Detailed Parameters
- Description：MOSFET P-CH 30V 4.3A TSOT-26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：4.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：50mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.8 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：642 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.38W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The DMP3056LVT-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and a maximum continuous drain current of -4.3A at +25°C, reducing to -3.7A at higher temperatures. The device utilizes a standard SOT-23 surface-mount package. Electrical characteristics include a typical gate threshold voltage of -1V and a maximum on-resistance of 70mΩ at VGS=-4.5V. Total gate charge is specified at 5.8nC for low-voltage switching applications.
Feature Summary
- Low on-resistance design minimizes conduction losses
- Low gate threshold voltage enables efficient drive from logic-level signals
- Fast switching speed supports high-frequency power management
- Totally lead-free and fully RoHS compliant construction
Applications
- High-efficiency power management circuits
- DC/DC converter load switches
- Battery protection modules
- Power distribution control systems
Procurement Notes
Verify the specific ordering suffix 'VT' against official manufacturer documentation, as the primary datasheet lists '-7' and '-13' variants. Confirm that the component meets all applicable environmental directives and packaging requirements before finalizing procurement specifications.
Selection Notes
Select this component for applications requiring low-voltage logic compatibility due to its low gate threshold voltage. Ensure thermal management strategies account for the junction-to-ambient thermal resistance when operating near maximum current limits in confined spaces.
Part Context
This part belongs to the DMP3056L series of P-channel MOSFETs designed for general-purpose switching. The series emphasizes minimizing on-state resistance while maintaining superior switching performance. It is intended for use in modern electronic designs where space efficiency and energy conservation are critical priorities.
Replacement Considerations
Direct substitutes include the DMP3056L-7 and DMP3056L-13. Verify pinout compatibility and electrical parameter alignment with the original design requirements before implementing any alternative components.
