DMP3068LVT-13

$0.07

Description：MOSFET P-CH 30V 2.8A TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:d26ae87129fe Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 2.8A TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：75mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id：1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.3 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：708 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.25W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

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DMP3068LVT-13

Overview

The DMP3068LVT-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 package and operates with a drain-source voltage of -30V. The device provides a maximum continuous drain current of -3.3A at +25°C. Static drain-source on-resistance is specified as 75mΩ at VGS = -10V and 105mΩ at VGS = -4.5V. Total gate charge is typically 7.3nC. Operating temperature range spans from -55°C to +150°C.

Feature Summary

Low on-resistance for high-efficiency power management
Low gate threshold voltage for improved drive capability
Low input capacitance for superior switching performance

Applications

General purpose interfacing switch
Power management functions

Procurement Notes

Verify the specific ordering suffix matches the required tape and reel quantity. Confirm RoHS compliance status and environmental declarations against the manufacturer's latest documentation. Ensure the component marking code aligns with the intended production date code requirements for your assembly process.

Selection Notes

Select this component when low on-state resistance and fast switching are critical for P-channel applications. Evaluate thermal resistance values based on the specific PCB copper area and mounting conditions. Consider the gate threshold voltage characteristics relative to the available control logic levels in the target circuit design.

Part Context

This part belongs to the DMP3068LVT series of P-channel MOSFETs. It utilizes a TSOT26 case configuration designed for surface mount technology. The product line emphasizes minimized on-state resistance while maintaining robust switching performance for modern electronic systems.