DMP3085LSD-13

Overview

The DMP3085LSD-13 is a dual P-channel enhancement mode MOSFET in an SO-8 package. It features a -30V drain-source voltage rating and low on-resistance of 70mΩ at VGS=-10V and 95mΩ at VGS=-4.5V. The device supports continuous drain currents of -3.9A at +25°C and -3.1A at +70°C, with a maximum pulsed current of -20A. Total power dissipation reaches 1.7W at +25°C. Operating temperature ranges from -55°C to +150°C.

Feature Summary

• Dual independent P-channel MOSFET configuration within a single SO-8 package
• Optimized for high efficiency power management through minimized on-state resistance
• Fast switching speed supported by low input capacitance characteristics
• Totally lead-free and fully RoHS compliant construction

Applications

• Backlighting circuits
• Power management functions
• DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging format containing 2500 units per reel. Confirm that the component meets the required environmental standards, specifically the Halogen and Antimony-free 'Green' device definition provided by the manufacturer. Ensure the selected variant matches the exact electrical specifications outlined in the official datasheet.

Selection Notes

Select this component when a compact dual P-channel solution is required for space-constrained designs. The SO-8 package provides efficient thermal performance suitable for applications requiring up to 1.7W power dissipation. Verify that the gate drive voltage levels align with the specified RDS(ON) thresholds for optimal conduction efficiency.

Part Context

This part belongs to the DMP3085LSD series manufactured by Diodes Incorporated. It utilizes a molded plastic case material classified as UL 94V-0 flammability rated. The terminals are finished with matte tin annealed over a copper lead frame, ensuring solderability per MIL-STD-202 Method 208.

Replacement Considerations

Consult the manufacturer's documentation for officially confirmed substitute part numbers before implementation.

FAQ

What is the maximum pulsed drain current capability?

The device supports a maximum pulsed drain current of -20A under conditions of a 10µs pulse duration and a 1% duty cycle.

How does the on-resistance vary with gate voltage?

The static drain-source on-resistance is specified as 70mΩ maximum at a gate-source voltage of -10V, and increases to 95mΩ maximum at a gate-source voltage of -4.5V.

Is the device suitable for high-temperature environments?

Yes, the operating and storage temperature range extends from -55°C to +150°C, allowing for operation in demanding thermal conditions.