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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V SOT23 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：3.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：65mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：563 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP3097LQ-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT23 package. It features a drain-source voltage (V_DSS) of -30 V and a gate-source voltage (V_GSS) rating of ±20 V. The device supports a steady-state drain current of -3.9 A at +25°C, with a maximum on-resistance (R_DS(ON)) of 65 mΩ at V_GS = -10 V and -3.8 A. Total power dissipation is rated at 1.0 W to 1.52 W depending on mounting conditions. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Designed for high-efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
- Qualified for automotive applications requiring specific change control, meeting AEC-Q101 standards and PPAP capability.
- Manufactured in IATF 16949 certified facilities with totally lead-free, fully RoHS compliant, and halogen- and antimony-free construction.
Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the component matches the exact Diodes Incorporated part number DMP3097LQ-7. Confirm the package type is SOT23 and that it meets AEC-Q101 qualification requirements if used in automotive contexts. Ensure the ordering suffix corresponds to the desired tape and reel quantity. Cross-reference datasheet revision DS42953 Rev. 2 for accurate electrical specifications before integration.
Selection Notes
Select this component for circuits requiring a -30 V P-channel MOSFET with low on-resistance. Consider the -3.9 A continuous drain current limit at +25°C when sizing thermal solutions. Evaluate the 123 °C/W junction-to-ambient thermal resistance for PCB layout optimization. Verify gate drive voltages align with the specified thresholds for optimal R_DS(ON) performance.
Part Context
This part belongs to the DMP3097LQ series of P-channel enhancement mode MOSFETs. It utilizes silicon technology housed in a molded plastic SOT23 case with matte tin annealed terminals over a copper lead-frame. The device is designed to minimize self-heating effects during operation through optimized transient thermal characteristics.
Replacement Considerations
DMP3098LQ-7
FAQ
What is the maximum pulsed drain current for the DMP3097LQ?
The maximum pulsed drain current is -20 A, measured with a 10μs pulse duration and a duty cycle of 1%.
Is the DMP3097LQ suitable for automotive electronics?
Yes, the DMP3097LQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.
