DMP3098LDM-7

$0.64

Description：MOSFET P-CH 30V 4A SOT-26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:87230e791ae3 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 4A SOT-26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：65mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：336 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.25W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-26
Package / Case：SOT-23-6

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DMP3098LDM-7

Overview

The DMP3098LDM-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SOT-26 surface-mount package with a drain-source voltage (V_DSS) of -30 V and a gate-source voltage (V_GSS) rating of ±20 V. The device supports a continuous drain current (I_D) of -4.0 A at 25°C ambient temperature, reducing to -3.0 A at 70°C. Total power dissipation is rated at 1.25 W, with a thermal resistance from junction to ambient of 100 °C/W. The static drain-source on-resistance (R_DS(ON)) is specified as 65 mΩ at V_GS = -10 V and 115 mΩ at V_GS = -4.5 V. Gate threshold voltage ranges from -1.0 V to -2.1 V. Operating and storage temperatures span from -55°C to +150°C.

Feature Summary

Low R_DS(ON) performance for efficient switching
Qualified to AEC-Q101 standards for high reliability
RoHS compliant and lead-free design

Applications

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance requirements and AEC-Q101 qualification standards if automotive or high-reliability applications are intended. Ensure the SOT-26 package dimensions align with the target PCB footprint layout.

Selection Notes

Select this component when a single P-channel MOSFET with a -30 V breakdown voltage is required in a compact SOT-26 package. Consider the -4.0 A continuous current capability and low on-resistance values at both -10 V and -4.5 V gate drive levels. Verify thermal management capabilities against the 100 °C/W junction-to-ambient resistance for the intended operating environment.

Part Context

This part belongs to the DMP3098LDM series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes a molded plastic case material with a UL flammability rating of 94V-0. The terminals feature a matte tin finish suitable for soldering per MIL-STD-208 Method 208. The device is classified as a new product within its documentation revision history.