DMP3098LQ-7

$0.43

Description：MOSFET P-CH 30V 3.8A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b9c9f55e011c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 3.8A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：70mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1008 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.08W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP3098LQ-7

Overview

The DMP3098LQ-7 is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V(BR)DSS) of -30V and a continuous drain current (ID) of -3.8A at +25°C. The device exhibits a maximum static drain-source on-resistance (RDS(ON)) of 70mΩ at VGS = -10V and 120mΩ at VGS = -4.5V. Total gate charge (Qg) is typically 4.0nC at VGS = -4.5V. Operating temperature range spans from -55°C to +150°C, with total power dissipation rated at 1.08W.

Feature Summary

Qualified to AEC-Q101 standards for automotive high reliability applications
Designed to minimize on-state resistance while maintaining superior switching performance
Totally lead-free and fully RoHS compliant
Halogen and antimony free green device

Applications

Power management functions
Analog switches
Load switches
Boost switches

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration containing 3,000 units per reel. Confirm that the component meets the required AEC-Q101 qualification standards if intended for automotive use. Ensure the SOT-23 package dimensions align with the target PCB footprint layout requirements.

Selection Notes

Select this component when a low on-resistance P-channel MOSFET is required for efficient power management circuits. The device offers fast switching speeds suitable for boost switch and load switch topologies. Consider the thermal characteristics and power dissipation limits relative to the ambient operating conditions and PCB copper pad area available for heat sinking.

Part Context

This part belongs to the DMP3098 series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series is engineered to provide low on-state resistance combined with fast switching capabilities. The DMP3098LQ variant specifically utilizes an SOT-23 case outline and holds AEC-Q101 qualification for automotive reliability standards.

Replacement Considerations

Check datasheets for alternative P-channel MOSFETs in the SOT-23 package with comparable V(BR)DSS and RDS(ON) specifications. Verify pinout compatibility and thermal resistance values before substitution. Ensure any replacement part also meets AEC-Q101 requirements if used in automotive contexts.