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The DMP3125L-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT-23 surface-mount package. It features a drain-source voltage (V_DSS) of -30 V and a continuous drain current (I_D) of -2.5 A at +25°C ambient temperature. The device exhibits a maximum on-resistance (R_DS(ON)) of 95 mΩ at V_GS = -10 V and 145 mΩ at V_GS = -4.5 V. Total power dissipation is rated at 650 mW, with a junction-to-ambient thermal resistance of 191 °C/W. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets the required UL flammability classification rating of 94V-0 for the molded plastic case material. Ensure compatibility with J-STD-020 moisture sensitivity level 1 standards during storage and handling procedures.
Select this component when a compact SOT-23 footprint is required for low-voltage power switching. Evaluate the gate threshold voltage characteristics against the available drive voltage levels to ensure reliable conduction. Consider the thermal resistance limitations and derating curves for continuous operation in enclosed environments or elevated ambient temperatures.
This part belongs to the DMP3125L series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. The product utilizes a standard SOT-23 case style designed for surface mount technology. The datasheet document number DS40097 Rev. 3 provides the definitive electrical specifications and mechanical dimensions for design integration.
Cross-reference the DMP3125L-7 variant, which shares identical electrical characteristics but differs in packaging quantity. Verify pinout compatibility and thermal performance metrics before substituting with other generic P-channel MOSFETs.
The maximum continuous drain current is -2.5 A at an ambient temperature of +25°C.
Yes, the operating and storage temperature range extends up to +150°C for the junction temperature.