DMP3130L-7

$0.48

Description：MOSFET P-CH 30V 3.5A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:de821c4d8d24 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 3.5A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：77mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id：1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：432 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：700mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP3130L-7

Overview

The DMP3130L-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source voltage (BVDSS) and a maximum continuous drain current of -3.5A at +25°C. The device exhibits a typical on-resistance of 59mΩ at VGS = -10V, with a maximum of 77mΩ under the same conditions. At VGS = -4.5V, the resistance is typically 73mΩ. The gate threshold voltage ranges from -0.6V to -1.3V. Total power dissipation is rated at 0.7W at +25°C in steady state. The component operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Designed for low on-state resistance to support high efficiency power management applications.
Features low gate threshold voltage and low input capacitance for fast switching speed.
Qualified to AEC-Q101 standards for automotive reliability.
Totally lead-free, fully RoHS compliant, and halogen and antimony free.

Applications

DC-DC Converters
Power Management Functions
Analog Switch

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration containing 3000 units per reel. Confirm that the component meets the required environmental specifications, including being halogen and antimony free. Ensure the design accounts for the 'Not Recommended for New Design' status indicated in the datasheet, which suggests evaluating alternative components like the DMP3068L for future projects.

Selection Notes

Select this component when a P-channel MOSFET with a -30V rating and SOT-23 package is required. Consider the thermal resistance values provided for FR-4 PCB layouts with minimum recommended pad areas. Evaluate the gate charge characteristics against the driving circuit capabilities to ensure adequate switching performance. Verify that the application does not exceed the maximum continuous body diode forward current or pulsed drain current limits.

Part Context

The DMP3130L is part of Diodes Incorporated's new generation MOSFET lineup designed to minimize on-state resistance while maintaining superior switching performance. The datasheet explicitly states that this part is not recommended for new designs and recommends using the DMP3068L instead. An automotive-compliant version is available under a separate datasheet as the DMP3130LQ.

Replacement Considerations

The datasheet explicitly recommends using the DMP3068L as an alternative. No other substitute part numbers are documented in the provided source material.

FAQ

Is the DMP3130L suitable for automotive applications?

The standard DMP3130L is qualified to AEC-Q101 standards. However, an automotive-compliant part is specifically available under a separate datasheet designated as DMP3130LQ.