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Product Detailed Parameters
- Description：MOSFET P-CH 30V 2.7A SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：122mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：227 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.08W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP3160L-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT23 package. It features a drain-source voltage (BVDSS) of -30V and a continuous drain current (ID) of -2.7A at +25°C. The static drain-source on-resistance (RDS(ON)) is typically 122mΩ at VGS = -10V and 190mΩ at VGS = -4.5V. The device has a total power dissipation of 1.08W and a thermal resistance junction-to-ambient of 115°C/W. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- Low on-resistance for high efficiency power management
- Fast switching speed with low input capacitance
- Totally lead-free and fully RoHS compliant
- Halogen and antimony free green device
Applications
- DC-DC converters
- Power management functions
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration as documented in the manufacturer's ordering information. Confirm that the component meets the required environmental standards, specifically RoHS compliance and halogen-free status, if mandated by the end-use application regulations. Ensure the supplier provides traceability documentation consistent with Diodes Incorporated manufacturing practices.
Selection Notes
Select this component when a compact SOT23 packaged P-channel MOSFET is required for low-voltage DC-DC conversion applications. Evaluate the RDS(ON) specifications against the circuit's gate drive voltage levels, noting the performance difference between -10V and -4.5V drive conditions. Consider the thermal resistance and power dissipation limits relative to the expected ambient temperature and PCB copper area available for heat sinking.
Part Context
This part belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to minimize on-state resistance while maintaining superior switching performance. The series targets high-efficiency power management solutions where small form factor packages like SOT23 are preferred for space-constrained designs.
Replacement Considerations
Consult the manufacturer's datasheet for direct cross-reference recommendations. Verify pinout compatibility and electrical parameter margins before substituting with other P-channel MOSFETs in the SOT23 package.
