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Product Detailed Parameters
- Description：MOSFET 2P-CH 2.8A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：2.8A (Ta)
- Rds On (Max) @ Id, Vgs：95mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：-
- Qualification：-
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Overview
The DMP3164LVT-13 is a dual P-channel enhancement mode MOSFET in a TSOT26 package. It features a -30V drain-source voltage rating and operates within a -55°C to +150°C junction temperature range. At VGS = -10V, the on-resistance is typically 95mΩ with a continuous current of -2.8A. At VGS = -4.5V, resistance is 140mΩ with -2.3A current. The device includes low input capacitance (324pF) and gate charge values of 4.4nC at -4.5V and 8.6nC at -10V.
Feature Summary
- Dual P-channel configuration for compact power management
- Optimized for low on-state resistance and fast switching performance
- Low input and output leakage characteristics
- Totally lead-free and fully RoHS compliant construction
Applications
- Backlighting circuits
- DC-DC converters
- Power management functions
Procurement Notes
Verify the specific ordering suffix matches the required tape and reel quantity. Confirm that the component meets all applicable environmental directives relevant to the target market. Ensure the datasheet revision aligns with the manufacturing date code on the received units.
Selection Notes
Select this component when a dual P-channel solution is required in a small footprint. Evaluate the thermal resistance limits against the expected ambient conditions. Verify that the gate drive voltage supports the desired on-resistance level for the specific application load.
Part Context
This part belongs to Diodes Incorporated's generation of low RDS(ON) MOSFETs designed for high efficiency applications. It utilizes a TSOT26 case material with a molded plastic green molding compound. The terminals are finished with matte tin annealed over a copper leadframe.
Replacement Considerations
Check pinout compatibility and electrical ratings before substituting. No public confirmed substitute part numbers are available in the source documentation.
FAQ
What is the maximum gate-source voltage?
The absolute maximum rating for gate-source voltage is ±12 V.
How does the on-resistance vary with gate voltage?
On-resistance decreases as the magnitude of the gate-source voltage increases, dropping from a typical 140mΩ at -4.5V to 95mΩ at -10V.
Is the device suitable for high-temperature environments?
Yes, the operating and storage temperature range extends up to +150°C.
