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Product Detailed Parameters
- Description：MOSFET P-CH 30V 3.3A SOT23 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：3.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：90mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：300 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP3165L-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT23 package. It features a drain-source voltage (BVDSS) of -30V and a continuous drain current (ID) of -3.3A at +25°C. The maximum on-resistance (RDS(ON)) is 90mΩ at VGS = -10V and 134mΩ at VGS = -4.5V. Gate-source voltage (VGSS) is rated at ±20V, with a gate threshold voltage (VGS(TH)) ranging from -1.3V to -2.1V. Total gate charge (Qg) is 2.0nC at VGS = -10V. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
- Totally lead-free and fully RoHS compliant, featuring halogen and antimony-free green device construction.
Applications
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10000-unit tape and reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets the required environmental standards, specifically EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2), and 2015/863/EU (RoHS 3). Ensure compatibility with the specified SOT23 surface mount footprint during procurement planning.
Selection Notes
Select this component when a single P-channel MOSFET with a -30V breakdown voltage and up to -3.3A continuous current capability is required. The low on-resistance makes it suitable for applications demanding high efficiency. Verify that the operating environment falls within the -55°C to +150°C junction temperature range and that the circuit design accommodates the ±20V gate-source voltage limit.
Part Context
This part belongs to the DMP3165L series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series utilizes silicon technology and is housed in the SOT23 surface-mount case. It is categorized under transistors and is designed for general-purpose power management tasks requiring compact packaging and efficient switching characteristics.
Replacement Considerations
Consult the manufacturer's documentation for officially confirmed substitute part numbers. Cross-reference electrical parameters such as BVDSS, ID, and RDS(ON) if considering alternative components from other manufacturers.
FAQ
What is the maximum pulsed drain current for the DMP3165L?
The maximum pulsed drain current is -13A, based on a 380μs pulse duration with a 1% duty cycle.
Does the DMP3165L include an internal body diode?
Yes, the datasheet specifies a Diode Forward Voltage (VSD) characteristic, indicating the presence of an intrinsic body diode between the source and drain.
