DMP3165LQ-7

$0.34

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9ccb6294b99a Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：90mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：300 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：800mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP3165LQ-7

Overview

The DMP3165LQ-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT23 package. It features a drain-source voltage (V_DSS) of -30 V and a maximum continuous drain current (I_D) of -3.3 A at +25°C. The device exhibits a typical on-resistance (R_DS(ON)) of 90 mΩ at V_GS = -10 V and 134 mΩ at V_GS = -4.5 V. Key electrical parameters include a gate threshold voltage (V_GS(TH)) ranging from -1.3 V to -2.1 V, total gate charge (Qg) of 2.0 nC at V_GS = -10 V, and a power dissipation capacity of 1.3 W under specific thermal conditions.

Feature Summary

Designed for high efficiency power management applications with minimized on-state resistance and superior switching performance.
Suitable for automotive applications requiring specific change control; qualified to AEC-Q101 standards and capable of PPAP submission.
Manufactured in IATF 16949 certified facilities with totally lead-free, fully RoHS compliant, and halogen/antimony free construction.

Applications

DC-DC Converters
Power Management Functions

Procurement Notes

Verify the component against the official datasheet DS42645 Rev. 2-2 to confirm authenticity and specifications. Ensure the ordering suffix matches the required packaging quantity: -7 indicates a 3000-unit tape and reel, while -13 denotes a 10000-unit tape and reel. Confirm that the supplier provides traceability documentation suitable for automotive or industrial quality requirements as specified by the manufacturer.

Selection Notes

Select this component when a low on-resistance P-channel MOSFET is required for efficient power switching within a -30 V system. The device supports both standard logic levels (-10 V) and lower drive voltages (-4.5 V). Consider its AEC-Q101 qualification and IATF 16949 manufacturing origin if the design targets automotive environments or requires strict supply chain change control protocols.

Part Context

This part belongs to the DMP3165LQ series of P-channel enhancement mode MOSFETs. It utilizes a silicon technology process optimized for low R_DS(ON) and fast switching speeds. The device is housed in a compact SOT23 surface-mount case made of green molding compound, weighing approximately 0.008 grams, designed for automated assembly processes.

Replacement Considerations

The DMP3165LQ-13 serves as a direct substitute offering identical electrical characteristics but packaged in a 10000-unit tape and reel instead of the 3000-unit configuration found in the -7 variant.

FAQ

Is the DMP3165LQ-7 suitable for automotive applications?

Yes, the DMP3165LQ is suitable for automotive applications requiring specific change control. It is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.