DMP3165SVTQ-7

$0.13

Description：MOSFET 2P-CH 30V 2.7A TSOT26
Series：-

SKU:ce0786f0b533 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 30V 2.7A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：2.7A (Ta)
Rds On (Max) @ Id, Vgs：95mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：287pF @ 15V
Power - Max：1.08W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：TSOT-26
Grade：Automotive
Qualification：AEC-Q101

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DMP3165SVTQ-7

Overview

The DMP3165SVTQ is a dual P-channel enhancement mode MOSFET designed for automotive applications. It features a -30V drain-source voltage rating and operates within a junction temperature range of -55°C to +150°C. The device offers low on-resistance, specified as 95mΩ at VGS = -10V with ID = -2.7A, and 140mΩ at VGS = -4.5V with ID = -2A. Continuous drain current reaches -2.7A at +25°C. Packaged in TSOT26, it supports fast switching speeds and includes an integrated body diode.

Feature Summary

Qualified to AEC-Q101 standards for automotive reliability
Dual configuration providing two independent P-channel MOSFETs in one package
Low input capacitance enabling fast switching performance
Manufactured in IATF 16949 certified facilities with PPAP capability

Applications

Backlighting circuits
DC-DC converters
Power-management functions

Procurement Notes

Verify the specific ordering suffix (-7 or -13) determines the tape and reel quantity. Confirm compliance with RoHS 2, RoHS 3, and halogen-free requirements if environmental specifications are critical. Ensure the design accounts for the thermal resistance values associated with the recommended pad layout versus minimum pad configurations to maintain safe operating temperatures.

Selection Notes

Select this component when dual isolated P-channel switching is required in a compact TSOT26 footprint. The -30V rating suits low-voltage automotive systems. Evaluate thermal performance based on the specific PCB copper area used, as power dissipation varies significantly between minimum and recommended pad layouts. Ensure gate drive voltages align with the threshold characteristics for efficient conduction.

Part Context

This part belongs to Diodes Incorporated's portfolio of automotive-grade discrete semiconductors. It utilizes a TSOT26 surface-mount package to minimize board space while maintaining robust electrical characteristics. The dual structure allows for cost-effective implementation of bridge or high-side switching topologies common in vehicle electronics.