DMP31D0UFB4-7B

$0.45

Description：MOSFET P-CH 30V 540MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9a586d495e7a Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 540MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：540mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：1Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.9 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：76 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：460mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN1006-3
Package / Case：3-XFDFN

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DMP31D0UFB4-7B

Overview

The DMP31D0UFB4-7B is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of -30 V and a gate-source voltage (V_GSS) rating of ±8 V. The device offers a typical static drain-source on-resistance (R_DS(ON)) of 1 Ω at V_GS = -4.5 V with a continuous drain current (I_D) of -0.76 A at +25°C. It utilizes an X2-DFN1006-3 package, providing a footprint of 0.6 mm² and a profile height of 0.4 mm.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Features a compact X2-DFN1006-3 case with a footprint thirteen times smaller than SOT23 and a low profile suitable for space-constrained designs.
Includes integrated ESD protection for the gate terminal rated at 2 kV.
Qualified to AEC-Q101 standards to ensure high reliability in automotive and industrial environments.

Applications

Load switching in portable electronics
High efficiency power management circuits
Low profile battery-powered devices

Procurement Notes

Verify that the specific ordering suffix matches the required reel size and tape width specifications. Confirm compliance with RoHS 2 and EU Directive 2002/95/EC requirements if halogen-free or antimony-free status is mandatory for the assembly process. Ensure the component meets the specified moisture sensitivity level per J-STD-020 before procurement.

Selection Notes

Select this component when a small form factor is critical, as the X2-DFN1006-3 package significantly reduces board area compared to traditional SOT23 packages. Consider the thermal resistance characteristics and the need for adequate copper plating on the PCB to manage power dissipation effectively within the operating temperature range.

Part Context

This part belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It is specifically engineered for applications requiring low on-resistance and fast switching speeds within a miniature surface-mount package. The product line emphasizes miniaturization and efficiency for modern electronic systems.