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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V SOT23 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：620mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：1Ohm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.6 nC @ 8 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：54 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：460mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP31D1UQ-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of -30V and operates within a temperature range of -55°C to +150°C. The device offers low on-resistance, specified as 1Ω at VGS = -4.5V with an ID of -400mA, and up to 2Ω at VGS = -1.8V with an ID of -100mA. Continuous drain current reaches -0.62A at +25°C. Total gate charge is 1.0nC at VGS = -4.5V. It is housed in an SOT23 package.
Feature Summary
- Qualified for automotive applications under AEC-Q101 standards
- Features low gate threshold voltage for efficient switching
- Includes integrated ESD protection on the gate terminal
Applications
- Load switches in portable electronics
Procurement Notes
Verify that the ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm compliance with RoHS 2, RoHS 3, and halogen-free requirements. Ensure the component meets IATF16949 facility manufacturing standards required for specific automotive change control protocols.
Selection Notes
Select this component for circuits requiring a compact P-channel switch with a -30V rating. The low gate charge supports fast switching speeds suitable for power management. Verify that the application logic levels align with the specified gate threshold voltage characteristics for reliable turn-on and turn-off performance.
Part Context
This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is designed for surface-mount assembly. The product line emphasizes automotive-grade reliability and environmental compliance through lead-free and green material specifications.
Replacement Considerations
Consult official documentation for verified substitute part numbers. Cross-referencing requires matching electrical parameters and package dimensions.
