DMP31D1UVT-13

Overview

The DMP31D1UVT-13 is a dual P-channel enhancement mode MOSFET in a TSOT26 package. It features a drain-source voltage of -30V and continuous drain current of -0.76A at +25°C. On-resistance is 1000mΩ at VGS=-4.5V and 1500mΩ at VGS=-2.5V. Gate-source voltage is ±8V, with power dissipation of 0.5W to 0.9W. Operating temperature ranges from -55°C to +150°C.

Feature Summary

• Dual configuration for compact power management
• Low on-state resistance for high efficiency
• Fast switching speed with low input capacitance
• Totally lead-free and fully RoHS compliant

Applications

• Backlighting circuits
• DC-DC converters
• Power-management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format. Confirm that the component meets all applicable environmental directives, including RoHS 2 and RoHS 3 compliance standards. Ensure the supplier provides valid traceability documentation for the manufacturing date code and lot number.

Selection Notes

Select this component for applications requiring dual P-channel control within a minimal footprint. Evaluate thermal performance based on the specified junction-to-ambient resistance values under different PCB copper area conditions. Verify gate drive voltage levels against the threshold characteristics to ensure reliable switching across the full operating temperature range.

Part Context

This device belongs to the DMP31D1UVT series of dual P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes a TSOT26 surface-mount package designed for space-constrained designs. The product line emphasizes minimized on-state resistance while maintaining superior switching performance for modern power management systems.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Cross-reference pinout configurations and electrical parameters such as breakdown voltage and on-resistance before implementation.