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The DMP31D7LDWQ-13 is a dual P-channel enhancement mode MOSFET in an SOT363 package. It features a -30V drain-source voltage and a maximum continuous drain current of -0.55A at +25°C. The on-resistance is 0.9Ω max at VGS=-10V and 1.7Ω max at VGS=-4.5V. Total power dissipation is 0.29W to 0.4W depending on board layout, with a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format. Confirm that the component meets AEC-Q101 qualification requirements if intended for automotive change control environments. Ensure compatibility with IATF 16949 certified manufacturing standards during the procurement process.
Select this component for designs requiring a dual P-channel MOSFET in a minimal footprint. The low on-resistance supports efficient power handling in DC-DC converters. Verify that the -30V rating aligns with system voltage levels. Consider the thermal resistance characteristics when designing the PCB copper area for adequate heat dissipation under steady-state conditions.
This device belongs to Diodes Incorporated's portfolio of surface-mount power MOSFETs. It utilizes a molded plastic SOT363 package designed for automated assembly. The product is lead-free, fully RoHS compliant, and halogen-free, adhering to environmental directives for electronic components used in consumer and industrial electronics.
Check datasheets for other dual P-channel MOSFETs in the SOT363 package from Diodes Incorporated or other manufacturers. Ensure pinout compatibility and verify that electrical parameters such as breakdown voltage and on-resistance meet or exceed the original specifications.
Yes, the part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.
The maximum continuous drain current is -0.55A at an ambient temperature of +25°C.
Yes, the datasheet specifies that the MOSFET includes an ESD protected gate.