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The DMP31D7LDWQ-7 is a dual P-channel enhancement mode MOSFET in an SOT363 package. It features a drain-source voltage (BVDSS) of -30V and a maximum continuous drain current (ID) of -0.55A at +25°C. The on-resistance (RDS(ON)) is 0.9Ω max at VGS = -10V and 1.7Ω max at VGS = -4.5V. Total power dissipation is 0.29W, with a thermal resistance (RθJA) of 433°C/W. Operating temperature range is -55°C to +150°C.
Verify the specific ordering suffix matches the required packing quantity. Confirm that the component meets AEC-Q101 qualification standards if intended for automotive use. Ensure the design accounts for the specified thermal resistance values under actual operating conditions. Validate compliance with RoHS and halogen-free requirements as stated in the datasheet.
Select this component for applications requiring low on-resistance and fast switching in a compact SOT363 footprint. Consider the -30V rating and -0.55A current limit when designing power stages. Evaluate thermal performance based on the 433°C/W junction-to-ambient resistance for steady-state operation.
This part belongs to Diodes Incorporated's DMP series of dual P-channel MOSFETs. It is designed to minimize on-state resistance while maintaining superior switching performance. The device is manufactured in IATF 16949 certified facilities and supports automotive change control requirements.
Compatible substitutes include DMP31D7L, DMP31D7LDW, DMP31D7LFB, DMP31D7LQ, DMP31D7LT, DMP31D7LV, and DMP31D7LW. Verify pinout compatibility and electrical parameters before substitution.
Yes, the DMP31D7LDWQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.
The maximum continuous drain current is -0.55A at an ambient temperature of +25°C.
Yes, the datasheet specifies that the device includes ESD protected gate functionality.