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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V SOT23 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：580mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：900mOhm @ 420mA, 10V
- Vgs(th) (Max) @ Id：2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.36 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：19 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：430mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP31D7LQ-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and a maximum continuous drain current of -0.58A at +25°C. The device exhibits a low on-state resistance of 0.9Ω at VGS = -10V and 1.7Ω at VGS = -4.5V. Packaged in an SOT-23 form factor, it operates within a temperature range of -55°C to +150°C.
Feature Summary
- Designed for high-efficiency power management applications with minimized on-state resistance while maintaining superior switching performance.
- Features an ESD protected gate structure and low input/output leakage characteristics.
- Qualified for automotive applications requiring specific change control, meeting AEC-Q101 standards and PPAP capability.
Applications
- DC-DC converters
- Power management functions
Procurement Notes
Verify the component against the official datasheet DS43825 Rev. 2-2 to confirm authenticity. Ensure the ordering suffix matches the required packing quantity, as the -13 suffix indicates a tape and reel carrier containing 10,000 units. Confirm compliance with RoHS directives and lead-free specifications during procurement validation.
Selection Notes
Select this component for circuits requiring a P-channel MOSFET with a -30V rating and low on-resistance. Consider the thermal resistance of 290°C/W when designing for steady-state operation without adequate copper plating. Evaluate the gate threshold voltage range to ensure compatibility with the intended logic drive levels.
Part Context
This part belongs to the DMP31D7LQ series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a standard SOT-23 package. The product line is designed to balance low conduction losses with fast switching speeds for efficient power conversion systems.
Replacement Considerations
The DMP31D7LQ-7 is a direct substitute offering identical electrical characteristics but packaged in a 3,000-unit tape and reel carrier instead of the 10,000-unit configuration found in the -13 variant.
