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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V SOT523 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：360mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：900mOhm @ 420mA, 10V
- Vgs(th) (Max) @ Id：2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.36 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：19 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：260mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
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Overview
The DMP31D7LTQ is a P-channel enhancement mode MOSFET in an SOT523 package. It features a drain-source voltage (BVDSS) of -30V and a continuous drain current (ID) of -0.36A at +25°C. The static drain-source on-resistance (RDS(ON)) is 0.9Ω max at VGS = -10V and 1.7Ω max at VGS = -4.5V. The gate threshold voltage (VGS(TH)) ranges from -1V to -2.6V. Total power dissipation is 0.26W, with a junction-to-ambient thermal resistance of 488°C/W.
Feature Summary
- Low on-resistance for high-efficiency power management
- Low gate threshold voltage enabling easy drive compatibility
- Fast switching speed with low input capacitance
- ESD protected gate structure
Applications
- DC-DC converters
- Load switches
- Power-management functions
Procurement Notes
Verify the specific ordering suffix (-7 or -13) against your required packing quantity, as these determine the tape and reel carrier size. Confirm that the SOT523 package dimensions align with your PCB footprint requirements. Ensure the component meets AEC-Q101 qualification standards if utilized in automotive applications requiring specific change control protocols.
Selection Notes
Select this component when a compact SOT523 form factor is required for low-current P-channel switching applications. Consider its -30V rating and sub-ohmic on-resistance characteristics for efficient load switching. Evaluate the thermal constraints carefully due to the small package size and high thermal resistance values provided in the datasheet.
Part Context
This device belongs to Diodes Incorporated's generation of P-channel MOSFETs designed to minimize on-state resistance while maintaining superior switching performance. It is manufactured in IATF 16949 certified facilities and is suitable for automotive applications requiring specific change control. The product is totally lead-free, fully RoHS compliant, and halogen and antimony free.
Replacement Considerations
Check for compatible parts within the same family, such as the DMP31D7L series, ensuring identical pinout and electrical specifications before substitution.
