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The DMP31D7LV-13 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum on-resistance of 0.9Ω at VGS = -10V and 1.7Ω at VGS = -4.5V. Continuous drain current ratings are -0.62A at +25°C and -0.5A at +70°C, with a total power dissipation of 0.5W at +25°C. Packaged in an SOT563 footprint, it includes gate protection diodes.
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel carrier quantity as documented in the manufacturer's ordering information. Confirm that the component meets RoHS 3 compliance standards and ensure the application design accounts for the specified thermal resistance values under steady-state conditions.
Select this component when a dual P-channel solution is required in a space-constrained SOT563 footprint. Evaluate the low input capacitance and fast switching speed characteristics against the target circuit frequency requirements. Ensure the operating voltage does not exceed the -30V drain-source limit and verify that the gate drive voltage aligns with the threshold specifications for optimal conduction.
This part belongs to the DMP series of dual P-channel enhancement mode MOSFETs from Diodes Incorporated. It shares the SOT563 mechanical outline with other variants in the family but is distinguished by its specific electrical parameters and the '-13' packaging designation indicating a 10,000-unit reel quantity.
An automotive-compliant version of this component is available under the separate datasheet designation DMP31D7LVQ.