DMP31D7LV-13

DMP31D7LV-13

$0.03
  • Description:MOSFET 2P-CH 30V 0.62A SOT563
  • Series:-

SKU:fa0d07d06b68 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 30V 0.62A SOT563
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:620mA (Ta)
  • Rds On (Max) @ Id, Vgs:900mOhm @ 420mA, 10V
  • Vgs(th) (Max) @ Id:2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:19pF @ 15V
  • Power - Max:500mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563
  • Grade:-
  • Qualification:-

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DMP31D7LV-13

Overview

The DMP31D7LV-13 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum on-resistance of 0.9Ω at VGS = -10V and 1.7Ω at VGS = -4.5V. Continuous drain current ratings are -0.62A at +25°C and -0.5A at +70°C, with a total power dissipation of 0.5W at +25°C. Packaged in an SOT563 footprint, it includes gate protection diodes.

Feature Summary

  • Dual configuration integrating two independent P-channel MOSFETs into a single compact package
  • Integrated ESD protected gate structure for enhanced signal integrity
  • Designed for high-efficiency power management applications through minimized on-state resistance

Applications

  • Motor controls
  • Power management functions
  • DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel carrier quantity as documented in the manufacturer's ordering information. Confirm that the component meets RoHS 3 compliance standards and ensure the application design accounts for the specified thermal resistance values under steady-state conditions.

Selection Notes

Select this component when a dual P-channel solution is required in a space-constrained SOT563 footprint. Evaluate the low input capacitance and fast switching speed characteristics against the target circuit frequency requirements. Ensure the operating voltage does not exceed the -30V drain-source limit and verify that the gate drive voltage aligns with the threshold specifications for optimal conduction.

Part Context

This part belongs to the DMP series of dual P-channel enhancement mode MOSFETs from Diodes Incorporated. It shares the SOT563 mechanical outline with other variants in the family but is distinguished by its specific electrical parameters and the '-13' packaging designation indicating a 10,000-unit reel quantity.

Replacement Considerations

An automotive-compliant version of this component is available under the separate datasheet designation DMP31D7LVQ.

DMP31D7LV-13DMP31D7LV-13
$0.03
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