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The DMP31D7LVQ is a dual p-channel enhancement mode MOSFET in an SOT563 package. It features a -30V drain-source voltage (BVDSS) and a gate-source voltage rating of ±20V. The device provides a maximum continuous drain current of -0.62A at +25°C. On-resistance (RDS(on)) is specified as 0.9Ω max at VGS = -10V and 1.7Ω max at VGS = -4.5V. Total power dissipation reaches 0.8W on a 1-inch square copper plate, with a thermal resistance (RθJA) of 153°C/W. Operating temperature range spans from -55°C to +150°C.
Verify the specific ordering suffix '-13' confirms the Tape & Reel packing quantity of 10,000 units. Ensure the component meets RoHS 3 and Halogen-free requirements if mandated by your design specifications. Confirm that the SOT563 package dimensions align with your PCB footprint constraints. Validate that the -30V voltage rating is sufficient for your specific circuit's maximum operating conditions.
Select this component when space-constrained designs require dual p-channel switching capabilities. The low input capacitance and fast switching speed make it suitable for high-frequency applications. Consider the RDS(on) values at your intended gate drive voltage (-4.5V or -10V) to ensure acceptable conduction losses. Verify thermal management capabilities given the junction-to-ambient resistance limits.
This part belongs to Diodes Incorporated's advanced MOSFET lineup designed for power management. It utilizes a planar technology to achieve low on-resistance. The dual configuration allows for efficient bridge circuits or load switching in minimal board area. It serves as a solution for portable electronics and industrial control systems requiring reliable p-channel switching.
Check datasheets for other Diodes Incorporated dual p-channel MOSFETs in SOT563 packages. Verify pinout compatibility and electrical parameters such as BVDSS, ID, and RDS(on). Ensure any substitute meets the same AEC-Q101 qualification if used in automotive contexts.
The maximum continuous drain current is -0.62A at an ambient temperature of +25°C.
Yes, the part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.
The typical total gate charge (Qg) is 0.8 nC when tested at VDS = -10V and ID = -0.24A.