DMP31D7LVQ-13

DMP31D7LVQ-13

$0.31
  • Description:MOSFET 2P-CH 30V 0.62A SOT563
  • Series:-

SKU:d9c52bd359d5 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 30V 0.62A SOT563
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:620mA (Ta)
  • Rds On (Max) @ Id, Vgs:900mOhm @ 420mA, 10V
  • Vgs(th) (Max) @ Id:2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:19pF @ 15V
  • Power - Max:500mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563
  • Grade:Automotive
  • Qualification:AEC-Q101

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DMP31D7LVQ-13

Overview

The DMP31D7LVQ is a dual p-channel enhancement mode MOSFET in an SOT563 package. It features a -30V drain-source voltage (BVDSS) and a gate-source voltage rating of ±20V. The device provides a maximum continuous drain current of -0.62A at +25°C. On-resistance (RDS(on)) is specified as 0.9Ω max at VGS = -10V and 1.7Ω max at VGS = -4.5V. Total power dissipation reaches 0.8W on a 1-inch square copper plate, with a thermal resistance (RθJA) of 153°C/W. Operating temperature range spans from -55°C to +150°C.

Feature Summary

  • Dual configuration integrating two independent p-channel MOSFETs within a single compact SOT563 package.
  • Optimized for high-efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
  • Includes integrated ESD protection on the gate terminal to enhance reliability during handling and operation.
  • Qualified for automotive applications under AEC-Q101 standards and manufactured in IATF 16949 certified facilities.

Applications

  • Motor controls
  • Power management functions
  • DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' confirms the Tape & Reel packing quantity of 10,000 units. Ensure the component meets RoHS 3 and Halogen-free requirements if mandated by your design specifications. Confirm that the SOT563 package dimensions align with your PCB footprint constraints. Validate that the -30V voltage rating is sufficient for your specific circuit's maximum operating conditions.

Selection Notes

Select this component when space-constrained designs require dual p-channel switching capabilities. The low input capacitance and fast switching speed make it suitable for high-frequency applications. Consider the RDS(on) values at your intended gate drive voltage (-4.5V or -10V) to ensure acceptable conduction losses. Verify thermal management capabilities given the junction-to-ambient resistance limits.

Part Context

This part belongs to Diodes Incorporated's advanced MOSFET lineup designed for power management. It utilizes a planar technology to achieve low on-resistance. The dual configuration allows for efficient bridge circuits or load switching in minimal board area. It serves as a solution for portable electronics and industrial control systems requiring reliable p-channel switching.

Replacement Considerations

Check datasheets for other Diodes Incorporated dual p-channel MOSFETs in SOT563 packages. Verify pinout compatibility and electrical parameters such as BVDSS, ID, and RDS(on). Ensure any substitute meets the same AEC-Q101 qualification if used in automotive contexts.

FAQ

What is the maximum continuous drain current for the DMP31D7LVQ?

The maximum continuous drain current is -0.62A at an ambient temperature of +25°C.

Is the DMP31D7LVQ suitable for automotive applications?

Yes, the part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.

What is the typical total gate charge at VGS = -10V?

The typical total gate charge (Qg) is 0.8 nC when tested at VDS = -10V and ID = -0.24A.

DMP31D7LVQ-13DMP31D7LVQ-13
$0.31
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