DMP31D7LW-13

$0.04

Description：MOSFET BVDSS: 25V-30V SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:1cf8c81083cd Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V-30V SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：900mOhm @ 420mA, 10V
Vgs(th) (Max) @ Id：2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.36 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：19 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：290mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

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DMP31D7LW-13

Overview

The DMP31D7LW-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and operates in the SOT-323 package. The device provides a maximum on-resistance of 0.9Ω at VGS = -10V and 1.7Ω at VGS = -4.5V. Continuous drain current reaches -0.52A at VGS = -10V and -0.38A at VGS = -4.5V. Gate-source voltage is rated at ±20V, with a threshold voltage between -1V and -2.6V. Total gate charge is 0.36nC, and power dissipation is 0.29W.

Feature Summary

Low on-resistance for high efficiency
Fast switching speed
ESD protected gate
Totally lead-free and fully RoHS compliant

Applications

DC-DC converters
Load switches
Power management functions

Procurement Notes

Verify the specific ordering suffix '-13' to confirm the 10,000-unit tape and reel packing quantity. Ensure the component matches the SOT-323 package outline and matte tin annealed terminal finish. Confirm compliance with EU RoHS directives and halogen-free requirements before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring low input capacitance and fast switching performance. Evaluate the thermal resistance characteristics against the expected duty cycle and ambient temperature conditions. Verify that the required gate drive voltage aligns with the specified threshold and on-resistance curves for optimal conduction losses.

Part Context

This part belongs to the DMP31D7LW series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is designed to minimize on-state resistance while maintaining superior switching performance. The product line targets high-efficiency power management solutions within compact surface-mount form factors.

Replacement Considerations

Consult official manufacturer documentation for verified equivalent part numbers. Cross-reference electrical parameters such as breakdown voltage, on-resistance, and package dimensions to ensure functional compatibility without altering circuit design constraints.