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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V-30V SOT323
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：380mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：900mOhm @ 420mA, 10V
- Vgs(th) (Max) @ Id：2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.36 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：19 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：290mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The DMP31D7LW-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum continuous drain current of -0.38A at +25°C, with a typical static on-resistance of 0.9Ω at VGS = -10V. Total power dissipation is rated at 0.29W in steady state. Electrical characteristics include a gate threshold voltage of -2.6V (max), total gate charge of 0.36nC, and input capacitance of 19pF. The component utilizes an SOT323 package.
Feature Summary
- Low on-resistance for high efficiency
- Fast switching speed
- ESD protected gate
- Totally lead-free and fully RoHS compliant
Applications
- DC-DC converters
- Load switches
- Power management functions
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the required operating conditions align with the specified thermal resistance values for FR-4 substrate mounting. Ensure compliance with moisture sensitivity level 1 requirements during storage and handling processes.
Selection Notes
Select this component for applications requiring low on-state resistance combined with superior switching performance. Evaluate the thermal characteristics against the intended PCB copper area, as power dissipation ratings depend heavily on the mounting environment. Consider the gate threshold voltage limits when designing control logic interfaces.
Part Context
This part belongs to the DMP31D7LW series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining fast switching capabilities. The product line targets high-efficiency power management solutions utilizing standard surface-mount packaging technologies.
Replacement Considerations
Consult official manufacturer documentation for verified equivalent parts. Cross-referencing requires matching electrical parameters such as breakdown voltage, on-resistance, and package dimensions.
