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Product Detailed Parameters
- Description：MOSFET P-CH 30V 300MA 3DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：1.5Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.7 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：40.9 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN0806-3
- Package / Case：3-XFDFN
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Overview
The DMP32D5LFA-7B is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V(BR)DSS) of -30V and a continuous drain current (ID) of -0.3A at +25°C. The device offers a maximum on-resistance (RDS(on)) of 1.5Ω at VGS = -4.5V and ID = -200mA, or 2.5Ω at VGS = -2.5V and ID = -100mA. It operates within a temperature range of -55°C to +150°C and dissipates up to 360mW. Packaged in an X2-DFN0806-3 case with a 0.4mm profile.
Feature Summary
- Ultra-low profile package designed for thin applications
- Low gate threshold voltage allows direct battery driving
- ESD protected structure integrated into the design
- Totally lead-free and fully RoHS compliant
Applications
- Load Switch
- Portable Applications
- Power Management Functions
Procurement Notes
Verify component authenticity through authorized channels as counterfeit risks exist. Confirm the specific ordering suffix matches the required tape and reel packaging quantity. Check for end-of-life status or obsolescence notices from the manufacturer before finalizing procurement plans. Ensure compliance with regional environmental directives regarding halogen and antimony content.
Selection Notes
Select this component for space-constrained designs requiring a small footprint. Consider the low gate threshold voltage for compatibility with low-voltage logic or battery sources. Evaluate the thermal resistance and power dissipation limits against the expected operating ambient temperature. Verify that the on-resistance specifications meet the efficiency requirements of the target load switch application.
Part Context
This part belongs to the DMP32 series of P-channel MOSFETs from Diodes Incorporated. It utilizes the X2-DFN0806-3 package, which provides a significantly smaller footprint compared to traditional SOT23 packages. The series is engineered to minimize on-state resistance while maintaining switching performance for efficient power management.
Replacement Considerations
Consult official datasheets for pin-compatible alternatives within the same manufacturer's portfolio. Verify that any substitute maintains identical voltage ratings, current capabilities, and package dimensions. Cross-reference electrical characteristics such as RDS(on) and gate charge to ensure functional equivalence in the existing circuit design.
