DMP32D9UFO-7B

$0.20

Description：MOSFET BVDSS: 25V~30V X2-DFN0604
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1dd2340362d1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V X2-DFN0604
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.35 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：21.8 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：320mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN0604-3
Package / Case：3-XFDFN

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DMP32D9UFO-7B

Overview

The DMP32D9UFO-7B is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X2-DFN0604-3 package. It features a drain-source voltage (V_DSS) of -30V and a continuous drain current (I_D) of -0.2A at +25°C. The maximum on-resistance (R_DS(ON)) is 5Ω at V_GS = -4.5V and -100mA. The gate threshold voltage (V_GS(TH)) ranges from -0.4V to -1.0V. Total power dissipation is 320mW with a thermal resistance (R_θJA) of 386°C/W. Operating temperature spans -55°C to +150°C.

Feature Summary

Low package profile with a 0.6mm by 0.4mm footprint
Very low gate threshold voltage for efficient drive requirements
ESD protected gate structure
Totally lead-free and fully RoHS compliant

Applications

General purpose interfacing switch
Power management functions
Analog switch applications

Procurement Notes

Verify the specific ordering suffix '-7B' against official manufacturer documentation to confirm packaging details, as suffixes can indicate variations in reel specifications or tape-and-reel configurations. Ensure compliance with environmental directives such as RoHS 3 and halogen-free standards when sourcing. Confirm that the component meets automotive quality requirements if applicable, as standard parts may differ from AEC-Q100 qualified variants.

Selection Notes

Select this component for circuits requiring a compact P-channel MOSFET with a -30V rating. The low gate threshold voltage supports logic-level driving capabilities. Evaluate the 5Ω maximum on-resistance to ensure it aligns with the target load current and acceptable voltage drop. Consider the small X2-DFN0604-3 package dimensions for space-constrained PCB layouts.

Part Context

This device belongs to the DMP32 series of P-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining switching performance. The DMP32D9UFO variant specifically utilizes the X2-DFN0604-3 case style, designed for high-efficiency power management applications where minimal board space is available.