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Product Detailed Parameters
- Description：MOSFET P-CH 30V 200MA 3DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.2V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.35 nC @ 4.5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：22.5 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：390mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN0606-3
- Package / Case：3-XFDFN
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Overview
The DMP32D9UFZ-7B is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of -30 V and a continuous drain current (I_D) of -200 mA at +25°C. The device offers low on-state resistance, specified as 5 Ω max at V_GS = -4.5 V and I_D = -100 mA. It operates within a junction temperature range of -55°C to +150°C and utilizes an X2-DFN0606-3 package with a maximum height of 0.42 mm.
Feature Summary
- Low on-resistance for high efficiency power management
- Very low gate threshold voltage (-1.0 V max)
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant
Applications
- General purpose interfacing switch
- Power management functions
- Analog switch
Procurement Notes
Verify the specific ordering suffix '-7B' against official documentation to confirm packaging details, such as tape and reel quantities. Ensure that the component meets all applicable environmental directives, including RoHS 3 compliance and halogen/antimony-free requirements, before finalizing procurement specifications.
Selection Notes
Select this component for applications requiring a compact surface-mount solution with low on-resistance characteristics. Consider the thermal resistance and power dissipation limits when designing for steady-state or pulsed operation. Verify that the gate drive voltage levels are compatible with the specified threshold and on-resistance test conditions.
Part Context
This part belongs to the DMP32 series of P-channel MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The device is housed in an X2-DFN0606-3 case, which provides a small footprint suitable for space-constrained designs.
Replacement Considerations
Consult official substitution lists for verified alternatives. Cross-reference key parameters such as V_DSS, I_D, R_DS(on), and package dimensions to ensure compatibility.
