DMP4009SPSW-13

$0.37

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:984ad65937c0 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：79A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：11mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：112 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5697 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.9W (Ta), 119W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMP4009SPSW-13

Overview

The DMP4009SPSW is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (V_DSS) of -40V and a maximum continuous drain current (I_D) of -79A at +25°C case temperature. The device exhibits a low on-resistance (R_DS(ON)) of 11mΩ at V_GS = -10V and 19mΩ at V_GS = -4.5V. Thermal resistance from junction to case is 1.05°C/W, with an operating temperature range of -55°C to +150°C.

Feature Summary

Designed for high-efficiency power management applications by minimizing on-state resistance while maintaining superior switching performance.
Features wettable flanks to facilitate improved optical inspections during manufacturing.
Manufactured using lead-free finish materials that are compliant with RoHS directives and free from halogens and antimony.

Applications

DC-DC converters
Power-management functions
Analog switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2,500 units per reel. Confirm compliance requirements such as RoHS and Halogen-free status against project specifications. Ensure thermal design accounts for the specified junction-to-case resistance values under steady-state conditions.

Selection Notes

Select this component when a -40V P-channel MOSFET with high current handling capability is required. The PowerDI5060-8 package offers a compact footprint suitable for space-constrained designs. Evaluate gate threshold voltage characteristics to ensure compatibility with available logic drive levels for optimal R_DS(ON) performance.

Part Context

This part belongs to the DMP40xx series of P-channel MOSFETs manufactured by Diodes Incorporated. These devices utilize advanced silicon technology to achieve low on-resistance within the PowerDI surface-mount package family. The series targets modern power management solutions requiring efficient switching and robust thermal performance.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions to ensure functional equivalence without compromising system reliability or thermal limits.

FAQ

What is the maximum pulsed drain current rating?

The maximum pulsed drain current (I_DM) is rated at -316A, based on a 10µs pulse duration with a 1% duty cycle.

Is the device qualified for automotive applications?

For automotive applications requiring AEC-Q100/101/104/200 qualification, PPAP capability, and IATF 16949 certified manufacturing, customers must contact Diodes Incorporated directly.