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Product Detailed Parameters
- Description：MOSFET P-CH 40V 9.1A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：9.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 9.8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：47.5 nC @ 5 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：4234 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.45W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMP4015SSSQ-13 is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -40V drain-source voltage and low on-resistance of 11mΩ at VGS=-10V and 15mΩ at VGS=-4.5V. The device supports continuous drain currents up to -10.1A at +25°C and withstands pulsed currents of -100A. Packaged in an SO-8, it meets AEC-Q101 standards with PPAP capability.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP support for automotive use
- 100% Unclamped Inductive Switch (UIS) tested in production
- Low input capacitance for efficient switching performance
- Totally lead-free, RoHS compliant, and halogen/antimony free
Applications
- DC-DC converters
- Power-management functions
- Analog switches
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 2,500 units per carrier. Confirm that the component meets IATF 16949 manufacturing facility requirements if your application demands specific change control protocols associated with automotive-grade parts.
Selection Notes
Select this component when designing circuits requiring robust P-channel switching with high current handling capabilities in a compact surface-mount form factor. Ensure gate drive voltages align with the specified thresholds for optimal RDS(ON) performance. Consider thermal management strategies based on the junction-to-ambient resistance values provided in the datasheet for steady-state operations.
Part Context
This part belongs to Diodes Incorporated's portfolio of automotive-grade power semiconductors. It utilizes silicon technology within an SO-8 package, offering a balance between electrical performance and physical footprint suitable for dense PCB layouts in modern electronic systems.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers before implementation. Do not assume functional equivalence with other generic P-channel MOSFETs without cross-referencing critical parameters such as UIS rating and AEC-Q101 qualification status.
