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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V SO-8 T&R 2
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：10.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 9.8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：112 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5697 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.6W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMP4016SSSQ-13 is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -40V drain-source voltage and a maximum on-resistance of 11mΩ at VGS = -10V and 15mΩ at VGS = -4.5V. The device supports a continuous drain current of -10.8A at +25°C and withstands pulsed currents up to -112A. Packaged in an SO-8 footprint, it operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP support for automotive use
- 100% Unclamped Inductive Switch (UIS) tested in production
- Low input capacitance for efficient switching performance
Applications
- DC-DC converters
- Power-management functions
- Analog switches
Procurement Notes
Verify the specific ordering suffix matches the required packaging quantity. Confirm that the component meets the necessary RoHS and halogen-free compliance requirements for your assembly process. Ensure the manufacturer's marking code aligns with the expected date code and product type verification during incoming inspection.
Selection Notes
Select this component when a -40V P-channel MOSFET with low on-resistance is required for automotive-grade designs. Consider the thermal resistance characteristics and package limitations when designing for high-current applications. Verify gate drive voltage compatibility with the specified threshold and on-resistance test conditions.
Part Context
This part belongs to Diodes Incorporated's automotive-qualified MOSFET portfolio. It utilizes a standard SO-8 surface-mount package. The device is manufactured in IATF 16949 certified facilities to ensure consistent quality for automotive supply chains.
Replacement Considerations
Direct substitutes must match the -40V rating, P-channel configuration, and SO-8 package. Verify equivalent RDS(ON) values and thermal performance before implementation.
