DMP4025SFGQ-13

$0.67

Description：MOSFET P-CH 40V 7.2A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:04cb3aaf96be Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 40V 7.2A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：25mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1643 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：810mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMP4025SFGQ-13

Overview

The DMP4025SFGQ-13 is a single-channel P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 package. It features a drain-source voltage (VDS) of -40 V and a continuous drain current (ID) of -7.2 A at +25°C ambient temperature. The device exhibits a maximum on-resistance (RDS(ON)) of 25 mΩ at VGS = -10 V and 45 mΩ at VGS = -4.5 V. Key electrical parameters include a gate threshold voltage (VGS(TH)) ranging from -0.8 V to -1.8 V, a total gate charge (Qg) of 33.7 nC at VGS = -10 V, and a power dissipation capability of 0.81 W. Operating temperatures range from -55°C to +150°C.

Feature Summary

AEC-Q101 qualified for automotive applications with PPAP capability.
Low RDS(ON) minimizes conduction losses during operation.
Fast switching speed reduces switching losses.
Totally lead-free, fully RoHS compliant, and halogen/antimony free.

Applications

Motor controls
Backlighting
DC-DC converters
Printer equipment

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets the required AEC-Q101 qualification standards if intended for automotive use. Ensure the PowerDI3333-8 package dimensions align with the target PCB footprint layout. Cross-reference the date code marking format against production batches to ensure traceability requirements are met.

Selection Notes

Select this component when a compact P-channel MOSFET with low on-resistance is required for space-constrained designs. The PowerDI3333-8 package offers a small footprint suitable for high-density boards. Consider the thermal resistance characteristics and derating curves for applications operating at elevated ambient temperatures. Verify that the gate drive voltage levels are compatible with the specified threshold and on-resistance conditions.

Part Context

This part belongs to the DMP4025 series of P-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series is designed to meet stringent automotive requirements, featuring AEC-Q101 qualification and PPAP support. These devices are produced in IATF 16949 certified facilities, ensuring consistent quality for automotive-grade applications requiring specific change control protocols.